发明名称 |
Continuous mesh three dimensional non-volatile storage with vertical select devices |
摘要 |
A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes. |
申请公布号 |
US8618614(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US201113323680 |
申请日期 |
2011.12.12 |
申请人 |
SCHEUERLEIN ROY E.;SANDISK 3D LLC |
发明人 |
SCHEUERLEIN ROY E. |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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