发明名称 Semiconductor device and fabrication method thereof
摘要 Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top portion of the word line, and depositing an insulating material in a remained part of the recess.
申请公布号 US8618615(B2) 申请公布日期 2013.12.31
申请号 US201113315249 申请日期 2011.12.08
申请人 KIM SE HYUN;HYNIX SEMICONDUCTOR INC. 发明人 KIM SE HYUN
分类号 H01L29/76;H01L29/94;H01L31/062;H01L31/119 主分类号 H01L29/76
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