发明名称 Method of forming patterns
摘要 A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.
申请公布号 US8617794(B2) 申请公布日期 2013.12.31
申请号 US201113283125 申请日期 2011.10.27
申请人 TSUBAKI HIDEAKI;FUJIFILM CORPORATION 发明人 TSUBAKI HIDEAKI
分类号 G03F7/004;G03F7/11;G03F7/32 主分类号 G03F7/004
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