发明名称 Methods of designing semiconductor devices and methods of modifying layouts of semiconductor devices
摘要 In a method of designing a semiconductor device, a transistor included in a layout of the semiconductor device may be selected. A biasing data may be set for changing a characteristic of the selected transistor. A design rule check (DRC) process for the layout of the semiconductor device may be performed after ignoring the biasing data. An optical proximity correction (OPC) process for the layout of the semiconductor device may be performed based on the biasing data.
申请公布号 US8621399(B2) 申请公布日期 2013.12.31
申请号 US201213458516 申请日期 2012.04.27
申请人 DO KYUNG-TAE;LEE YONG-SEOK;WON HYO-SIG;CHOI JUNG-YUN;KIM JONG-HO;SAMSUNG ELECTRONICS CO., LTD. 发明人 DO KYUNG-TAE;LEE YONG-SEOK;WON HYO-SIG;CHOI JUNG-YUN;KIM JONG-HO
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
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