Method of fabricating floating gate of flash memory device

摘要

A method of fabricating a floating gate of a flash memory device is provided. The method includes: forming a tunneling oxide layer on a substrate; forming a conductive thin layer on the tunneling oxide layer; applying a photoresist on the conductive thin layer; defining a floating gate region by patterning the photoresist; forming polymer sidewalls on the sides of the patterned photoresist; and selectively removing the conductive thin layer using the photoresist and the polymer sidewalls as a mask to form a floating gate.