发明名称 |
Wide-band-gap reverse-blocking MOS-type semiconductor device |
摘要 |
A wide-band-gap reverse-blocking MOS-type semiconductor device includes a SiC n--type drift layer; a p+-type substrate on the first major surface side of the drift layer; a trench extending through a p+-type substrate into the drift layer; a titanium electrode in the trench bottom that forms a Schottky junction with the SiC n--type drift layer; an active section including a MOS-gate structure on the second major surface side of the drift layer facing to the area, in which the Schottky junctions are formed; a breakdown withstanding section surrounding the active section; and a trench isolation layer surrounding the breakdown withstanding section, the trench isolation layer extending from the second major surface of the drift layer into p+-type substrate and including insulator film buried therein. The device facilitates making a high current flow with a low ON-voltage and exhibits a very reliable reverse blocking capability. |
申请公布号 |
US8618557(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US201213372807 |
申请日期 |
2012.02.14 |
申请人 |
YOSHIKAWA KOH;FUJI ELECTRIC CO., LTD. |
发明人 |
YOSHIKAWA KOH |
分类号 |
H01L29/15;H01L21/332;H01L21/338;H01L21/70;H01L21/84;H01L23/02;H01L29/02;H01L29/66 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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