发明名称 |
FinFET design and method of fabricating same |
摘要 |
An integrated circuit device and method for manufacturing the same are disclosed. An exemplary device includes a semiconductor substrate having a substrate surface and a trench isolation structure disposed in the semiconductor substrate for isolating an NMOS region of the device and from a PMOS region of the device. The device further includes a first fin structure comprising silicon or SiGe disposed over a layer of III-V semiconductor material having a high band gap energy and a lattice constant greater than that of Ge; a second fin structure comprising silicon or SiGe disposed over a layer of III-V semiconductor material having a high band gap energy and a lattice constant smaller than that of Ge; and a gate structure disposed over and arranged perpendicular to the first and second fin structures. |
申请公布号 |
US8618556(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US201113174170 |
申请日期 |
2011.06.30 |
申请人 |
WU CHENG-HSIEN;KO CHIH-HSIN;HUANG YAO-TSUNG;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU CHENG-HSIEN;KO CHIH-HSIN;HUANG YAO-TSUNG;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/24;H01L29/26 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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