发明名称 |
Fin bipolar transistors having self-aligned collector and emitter regions |
摘要 |
A method for fabricating a bipolar transistor device. The method includes the steps of: providing a SOI substrate having a silicon layer thereon; patterning lithographically a fin hardmask on the silicon layer; placing a dummy contact line over a central portion of patterned fin hardmask; doping the collector/emitter regions; depositing a filler layer over the collector region and the emitter region; removing the dummy contact line to reveal a trench and the central portion of the patterned fin hardmask; forming fin-shaped base regions by removing, within the trench, a portion of the silicon layer not covered by the central portion of the patterned fin hardmask after the step of removing the dummy contact line; doping the fin-shaped base region; and forming a contact line by filling the trench with a contact line material over the fin-shaped base regions, where the collector/emitter regions are self-aligned with the contact line. |
申请公布号 |
US8617957(B1) |
申请公布日期 |
2013.12.31 |
申请号 |
US201213607877 |
申请日期 |
2012.09.10 |
申请人 |
CHANG JOSEPHINE B;LAUER GEN PEI;LAUER ISAAC;SLEIGHT JEFFREY W;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B;LAUER GEN PEI;LAUER ISAAC;SLEIGHT JEFFREY W |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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