| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemomechanical polishing method and its device added with electropolishing which prevents electrical conductivity and mechanical strength from changing due to oxidation of a wafer surface during polishing, thus changing polishing rate. SOLUTION: In a chemomechanical polishing device, a wafer surface with a conductive film formed in a surface is made an anode while supplying slurry, the wafer which is held by a polishing head using a polishing pad attached to a polishing surface plate upper surface as a cathode is pressed to the polishing pad, and the surface of the wafer is flattened by polishing while removing a conductive material of the wafer surface by electrolytic elusion by electrolytic action while applying a voltage between the wafer and the polishing pad. It has a plurality of nozzles which spray gas for preventing oxidation of a metallic film formed in the wafer surface. The plurality of nozzles are disposed at regular intervals in a periphery of the wafer to jet the gas from an outer circumference of the wafer to a center thereof. COPYRIGHT: (C)2009,JPO&INPIT |
