| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing, with high productivity, a display device excelling in electric characteristics, and having a thin-film transistor with high reliability. SOLUTION: A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin-film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin-film transistor is manufactured. COPYRIGHT: (C)2009,JPO&INPIT |
