| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing and suppressing the occurrence and an expansion of cracks resulting from a heat cycle. <P>SOLUTION: In the semiconductor device having bonding layers 24 constituted by bonding a primary member 25 and a secondary member 23a which have mutually different thermal expansion coefficients, peripheries of the bonding layers 24 are arranged so as to be pinched together with the primary member 25, and there is provided a tertiary member 23b having a small thermal expansion difference with the primary member 25 as compared with the secondary member 23a. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
