MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A magnetic memory device and an operating method thereof are disclosed. The disclosed magnetic memory device may include a magnetoresistive element having a free layer and a pinned layer, a first conductive line for inducing a Rashba field in the free layer, and a second conductive line for applying an external magnetic field to the free layer. A magnetization direction of the free layer may be switched by the Rashba field and the external magnetic field. The free layer and the pinned layer may have perpendicular magnetic anisotropy. The magnetic memory device may further include a switching device connected to the magnetoresistive element. The second conductive line may be a part of the switching device. The switching device may include a transistor, and the second conductive line may be a gate line of the transistor. If the magnetoresistive element has a bottom-pinned structure, the magnetoresistive element may be provided between the first and second conductive lines. If the magnetoresistive element has a top-pinned structure, the first conductive line may be provided between the magnetoresistive element and the second conductive line.