| 摘要 |
Provided are a new method and a new system for extending an ion source cycle and improving an ion source performance while injecting carbon. A process for injecting carbon ions comprises a step for utilizing a dopant gas mixture comprising carbon monoxide and one or more types of gas containing fluorine which have carbon which is expressed by a CxFy formula (x>=1, y>=1). The gas containing the fluorine is included in the mixture at 3-12 volume percentages in comparison to the volume of the dopant gas mixture. A fluorine ion, radical, or the combination of the fluorine ion and the radical are emitted from the dopant gas mixture and reduce the amount of deposit by responding to the deposit generated by the carbon. A single dopant gas mixture provides carbon ions and removes the deposit which generates a problem while injecting the carbon. [Reference numerals] (AA) Polish a copper film 107;(BB) Remove the cooper film 107;(CC) Remove a barrier film 105 + Polish a second hard mask film 104;(DD) Remove the second hard mask film 104 + Remove a first hard mask film 102 + Polish an inter-layer insulation film 101 |
