SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION

摘要

SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.FIG. 1