SEMICONDUCTOR DEVICE HAVING A POWER METAL-OXIDE-SILICON TRANSISTOR

摘要

The present invention provides a semiconductor device having a power MOS transistor capable of minimizing the calorific value and improving the reliability. The semiconductor device having a power MOS transistor according to the present invention comprises a semiconductor substrate in which an impurity region having a first conductivity is formed; a drift region which is formed in the impurity region and has the first conductivity; a body region which is formed in the impurity region to be adjacent to the drift region and has a second conductivity different from the first conductivity; a drain extension insulating film which is formed on the drift region; a gate insulating film and a gate electrode which are sequentially laminated on the semiconductor substrate to straddle a part of the body region and a part of the drift region; a drain extension electrode which is formed on the drain extension insulating film; a drain region which is adjacent to one side opposite to the body region in the drift region and has the first conductivity; and a second source which is formed in the body region and has the second conductivity.