发明名称 NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
摘要 <p>A nonvolatile memory device is provided. The nonvolatile memory device includes a nonvolatile memory chip which includes a static latch and a dynamic latch which receives data from the static latch through a floating node, a device controller which controls the operation of the nonvolatile memory chip, and a refresh controller which controls the refresh operation of the dynamic latch. The dynamic latch includes a storage node, a writing transistor which writes the data of the floating node on the storage node and a reading transistor which reads the data of the storage node. The writing transistor and the reading transistor share the floating node.</p>
申请公布号 KR20130142421(A) 申请公布日期 2013.12.30
申请号 KR20120065626 申请日期 2012.06.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JOO, SANG HYUN;PARK, IL HAN;SONG, KI WHAN
分类号 G11C16/06 主分类号 G11C16/06
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