发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME |
摘要 |
<p>A nonvolatile memory device is provided. The nonvolatile memory device includes a nonvolatile memory chip which includes a static latch and a dynamic latch which receives data from the static latch through a floating node, a device controller which controls the operation of the nonvolatile memory chip, and a refresh controller which controls the refresh operation of the dynamic latch. The dynamic latch includes a storage node, a writing transistor which writes the data of the floating node on the storage node and a reading transistor which reads the data of the storage node. The writing transistor and the reading transistor share the floating node.</p> |
申请公布号 |
KR20130142421(A) |
申请公布日期 |
2013.12.30 |
申请号 |
KR20120065626 |
申请日期 |
2012.06.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JOO, SANG HYUN;PARK, IL HAN;SONG, KI WHAN |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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