| 摘要 |
The present invention relates to an erasing method and soft programming method of a nonvolatile memory device, which includes the steps of: erasing a dummy cell and main memory cells; performing a first soft program operation for the main memory cells; and performing a second soft program operation for the dummy cell after the first soft program operation is completed. [Reference numerals] (AA) Start;(BB) End;(S110) Perform a removal action targeting dummy cells and main cells;(S120) Perform a review action regarding the removal;(S130) Perform a soft program regarding main memory cells;(S140) Perform a review action regarding the soft program for the main memory cells;(S150) Perform a soft program regarding the dummy cells;(S160) Perform a review action regarding the soft program for the dummy cells |
