| 摘要 |
<p>An atomic layer depositing device includes a substrate support fixture, a shower head, a shower head reciprocating device, and a gas supply control device. The shower head reciprocating device makes the shower head reciprocate and the gas supply control device repeats a step of simultaneously spraying a material precursor and purge gas and a step of simultaneously spraying a reaction precursor and the purge gas through the shower head in order to coat the substrate with a first and second reaction layers. The precursor and the purge gas are immediately exhausted through the shower head. The atomic layer depositing device prevents the material precursor and the reaction precursor to be mixed with each other by not spraying the material precursor and the reaction precursor at the same time, increases throughput by spraying and exhausting the purge gas and the precursor at the same time, can be applied to a large substrate by minimizing a reciprocating distance of the shower head, and reduces the size of the equipment. In addition, an atomic layer can be deposited selectively on a specific part of the substrate without a shadow mask. [Reference numerals] (AA) First direction</p> |
