| 摘要 |
<p>Lithography area of a mask (M) is divided into a plurality of stripes with the width depending on area density of a figure pattern made on the mask by electron beam (B), and the amount of drift is measured when lithography is completed for at least one of the stripes. A drift correction method of the present invention corrects irradiation position of the electron beam by using the amount of drift. The width of the stripe is made narrow at the area having high area density of the figure pattern and is made wide at the area having low area density of the figure pattern. Also, it is more desirable for the lithography area to be divided with the width depending on the variation amount of the drift from the start of irradiation of the electron beam. [Reference numerals] (10) Overall control unit;(11) Memory;(12) Stage location measuring tool;(13) Layout data creation circuit;(14) Drift quantity measuring circuit;(15) Drift corrected quantity calculating circuit;(17) Patter area density calculating circuit;(18) Stripe width determination information collection circuit;(19) Stripe creating circuit;(7) Radiation control unit;(AA) Patter data drift correction coefficient history data, etc.</p> |
