发明名称 |
RERAM WITH A MECHANICAL SWITCH AS A SELECTOR, ARRAY STRUCTURE INCLUDING THE SAME AND FABRICATION METHOD FOR RERAM WITH A MECHANICAL SWITCH AS A SELECTOR |
摘要 |
<p>Disclosed is a variable resistance nonvolatile memory device having a mechanical switch, which is included in an array structure, as a selector wherein the variable resistance nonvolatile memory device having the mechanical switch as the selector comprises a first electrode layer; a variable resistance layer formed on the first electrode layer; a second electrode layer formed on the variable resistance layer; an insulation supporting part formed on the second electrode layer to form an exposed part at the middle of the upper surface of the second electrode layer; and a switch member formed on the insulation supporting part by crossing the upper side of the exposed part to be separated from the exposed part. The switch member is varied to touch the exposed part when voltage difference, which is equal or or more than a predetermined value, occurs and is connected to the first electrode layer.</p> |
申请公布号 |
KR20130142761(A) |
申请公布日期 |
2013.12.30 |
申请号 |
KR20120066268 |
申请日期 |
2012.06.20 |
申请人 |
INTELLECTUAL DISCOVERY CO., LTD. |
发明人 |
KIM, TAE GEUN;KIM, HEE DONG |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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