发明名称 METHOD FOR PREPARING ZINC OXIDE BASED TRANSPARENT CONDUCTIVE THIN FILM
摘要 A manufacturing method of a zinc oxide transparent conductive thin film is provided to improve the uniformity of the resistivity according to the location on a thin file surface. a manufacturing method of the zinc oxide transparent conductive thin film forms the zinc oxide transparent conductive thin film on materials by using a sputtering method. The size of the magnetic flux density applied at a sputtering target is 1.5 KG-4.5 KG range. The difference of the resistivity according to the location on the thin film surface is 10-50 % range of the maximum resistivity. The zinc oxide transparent conductive thin film has the resistivity of 2.00 x 10^4cm-5.00 x10^4Фcm range. The method is performed in the H2 mixed gas atmosphere of Ar or Ar and 0.1-10 vol%. The formed thickness of the thin film is 10-300nm range. The element furnace minor Al or Ga is added to the zinc oxide.
申请公布号 KR20090035908(A) 申请公布日期 2009.04.13
申请号 KR20070100939 申请日期 2007.10.08
申请人 LG CHEM. LTD. 发明人 JANG, HYEON WOO;BANG, JUNG SIK
分类号 C23C14/35 主分类号 C23C14/35
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