发明名称 |
METHOD FOR PREPARING ZINC OXIDE BASED TRANSPARENT CONDUCTIVE THIN FILM |
摘要 |
A manufacturing method of a zinc oxide transparent conductive thin film is provided to improve the uniformity of the resistivity according to the location on a thin file surface. a manufacturing method of the zinc oxide transparent conductive thin film forms the zinc oxide transparent conductive thin film on materials by using a sputtering method. The size of the magnetic flux density applied at a sputtering target is 1.5 KG-4.5 KG range. The difference of the resistivity according to the location on the thin film surface is 10-50 % range of the maximum resistivity. The zinc oxide transparent conductive thin film has the resistivity of 2.00 x 10^4cm-5.00 x10^4Фcm range. The method is performed in the H2 mixed gas atmosphere of Ar or Ar and 0.1-10 vol%. The formed thickness of the thin film is 10-300nm range. The element furnace minor Al or Ga is added to the zinc oxide.
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申请公布号 |
KR20090035908(A) |
申请公布日期 |
2009.04.13 |
申请号 |
KR20070100939 |
申请日期 |
2007.10.08 |
申请人 |
LG CHEM. LTD. |
发明人 |
JANG, HYEON WOO;BANG, JUNG SIK |
分类号 |
C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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