| 摘要 |
<p>A semiconductor device comprises: multi-layered control gates laminated on a substrate including a cell area and a slimming area; multi-layered sacrificial films on a part among the slimming areas of the substrate and formed on a layer same as the control gates to be surrounded with the control gates; multi-layered sub-control gates including the cell area and the slimming area and interposed between the control gates and between the sacrificial films; and a common node penetrating through an interlayer insulation layer and the sub-control gates in the slimming area. The interference between adjacent memory cells can be minimized. Furthermore, the common node can be formed without adding a separate process as the common node is formed to penetrate through the interlayer insulation layer and the sub-control gates in the slimming area when the semiconductor device is manufactured.</p> |
