SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR

摘要

Provided is a fabrication method for a semiconductor structure, comprising: a) forming a gate stack on a semiconductor substrate, and removing a part of the substrate at two sides of the gate stack; b) forming a spacer on the gate stack and a part of the sidewall of the substrate therebelow; c) forming a doped region in the substrate at two sides of the gate stack, and forming a first dielectric layer which covers the whole semiconductor structure; d) selectively removing a part of the gate stack and a part of the first dielectric layer in the width direction of the gate stack, so as to form a channel region opening and a source/drain region opening at two sides thereof; e) forming a high-k dielectric layer on the sidewall of the channel region opening; and f) epitaxially growing a continuous fin structure across the channel region opening and the source/drain region opening. Correspondingly, also provided is a semiconductor structure fabricated according to the above method. The present invention can simply and efficiently form a high-quality sidewall for isolating a gate stack and a source/drain region.