| 摘要 |
<p>The present invention relates to a radiation detector with organic photodiodes and to a method of producing such a radiation detector. The TFT backplane (103, 104) is placed between the scintillator(101) and the organic photodiode layer stack (105, 106, 107, 108). This implies the use of transparent TFT-electronics, e.g., a-Si with back-thinned glass or an organic TFT on foil. The geometrical order enables a multitude of possible stack built- ups for OPDs and has advantages for encapsulation and manufacturing.</p> |
