| 摘要 |
The present invention relates to a thin film deposition device. The thin film deposition device according to the present invention includes a chamber, a substrate supporting unit, which is installed inside the chamber, on which multiple substrates are placed and some of them are selectively being rotated, and a gas supply unit for supplying multiple process gases towards the substrates, wherein the gas supply unit supplies the multiple gases regarding each substrate simultaneously or consecutively. |
