METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER MANUFACTURED BY THE METHOD

摘要

In a method for manufacturing an epitaxial silicon wafer with an epitaxial layer formed on the surface of a phosphorus-added silicon wafer based on the in-plane resistance distribution of the silicon wafer before an epitaxial growth process, the in-plane thickness distribution of the epitaxial layer formed on the surface is controlled. [Reference numerals] (AA) Epitaxial layer thickness [μm];(BB) Distance from the center of an epitaxial silicon wafer [mm]