| 摘要 |
Disclosed is a light emitting device having an electron blocking layer. A semiconductor light emitting device comprises a n-type semiconductor layer, a p-type semiconductor layer, an active layer located between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer located between the active layer and the p-type semiconductor layer, wherein a first layer is located to be closer to the active layer than second to fourth layers and has a wider band gap than the second to fourth layers, a second layer is located to be adjacent to the first layer, and a third layer is located between the second layer and the fourth layer and has a narrower band gap than the second to fourth layers. Thereby, the present invention can provide the light emitting device capable of effectively blocking the electron and improving the hole injection efficiency. |
