| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability in a semiconductor device. <P>SOLUTION: The semiconductor device of the invention includes: a pad electrode 53 formed on the first main surface of a semiconductor chip; a glass substrate 56 attached to the first main surface of the semiconductor chip; a via hole 81 passing through from the second main surface of the semiconductor chip to the surface of the pad electrode 53; a sidewall insulating film 59A composed of a CVD film formed at the sidewall of the via hole 81 and the side end part of the semiconductor chip; and a wiring layer 63 electrically connected with the pad electrode 53 through the via hole 81. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
