MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION

摘要

Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub regions and coupler sub regions. The coupler material of the coupler sub regions antiferromagnetically couples neighboring magnetic sub regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub regions. Neighboring magnetic sub regions, spaced from one another by a coupler sub region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT MRAM) systems, and methods of fabrication.