| 摘要 |
Provided is a phase-shifting mask blank which is suitable for use in producing phase-shifting masks of an edge enhancement type therefrom with high mass productivity. This phase-shifting mask blank (MB) comprises: a glass substrate (S); a phase-shifting layer (11) formed on a surface of the glass substrate and comprising Cr as a main component; an etching stopper layer (12) which has been formed on the phase-shifting layer, the direction from the glass substrate toward the phase-shifting layer being the upward direction, and which comprises at least one metal, as a main component, selected from Ni, Co, Fe, Ti, Si, Al, Nb, Mo, W, and Hf; and a light-shielding layer (13) formed on the etching stopper layer and comprising Cr as a main component. |
