| 摘要 |
<p>In the present invention, a back electrode ideal for a chalcopyrite photoelectric conversion element is produced with good efficiency. A back electrode (200) of a certain embodiment of the present invention has a first metal layer (202) and a second metal layer (204). The first metal layer (202) is disposed on one surface (100A) of a substrate (100) and is formed from a metal having a higher electrical conductivity and higher sputtering rate than molybdenum (Mo). The second metal layer (204) is an Mo film that contacts the first metal layer (202). Also provided according to an embodiment of the present invention is a chalcopyrite photoelectric conversion element (1000) having a photoelectric conversion layer (300). The photoelectric conversion layer (300) comprises a chalcopyrite semiconductor layer (320), a buffer layer (330), a high-resistance transparent electrode layer (342), and a low-resistance transparent electrode layer (344), and the layers are formed in that order on the top surface of the back electrode (200).</p> |
