SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof. The method comprises: forming a first masking layer (106) on a substrate (100); forming one of a source region and a drain region (118) with stress by using the first masking layer as a mask; forming a second masking layer (120) on the substrate; forming the other one of the source region and the drain region by using the second masking layer as a mask; removing a part of the second masking layer, the part being close to the other one of the source region and the drain region; forming a gate dielectric layer (130), and forming a gate conductor (134) in the form of a side wall on a side wall of the remaining part of the second masking layer.