SEMICONDUCTOR DEVICE AND PROGRAMMING METHOD

摘要

This semiconductor device has: a first variable resistance switch (401), which has a first terminal (4011) and a second terminal (4012), and which includes a variable resistance layer having the resistance state thereof varied when an applied voltage exceeds a reference value; a second variable resistance switch (402), which has a third terminal (4021) and a fourth terminal (4022), has a common node (403) formed by having the third terminal (4021) connected to the second terminal (4012), and which includes a variable resistance layer having the resistance state thereof varied when an applied voltage exceeds a reference value; first wiring (411) connected to the first terminal (4011); second wiring (421), which is connected to the fourth terminal (4022), and which extends in the direction intersecting the first wiring (411) in a planar view; and a current control switch element (404), which has one end thereof connected to the common node (403).