| 摘要 |
Provided is a transistor element wherein the state thereof is changed into that of a resistive element with a small power consumption without migration and melting of the resistive element due to a large current, and physical shape changes, such as breakage of an insulating film due to high electric field application, and the state change can be used as a memory element. This metal oxide transistor is provided with: a semiconductor thin film (13) formed of a metal oxide semiconductor; a source electrode (14) and a drain electrode (15), which are in contact with the semiconductor thin film (13); and a gate electrode (11), which faces the semiconductor thin film (13) with a gate insulating film (12) therebetween. In the initial state, the metal oxide transistor exhibits first characteristics wherein the metal oxide transistor operates as a transistor element having a drain current changed depending on the gate voltage and the drain voltage, and when a drain current at a predetermined current density or more is made to flow for a predetermined time, the characteristics transit to second characteristics wherein the drain current less depends on the gate voltage compared with the first characteristics, the drain current changes depending mainly on the drain voltage, and ohmic resistive characteristics are exhibited irrespective of the gate voltage. |
