| 摘要 |
<p>Disclosed is a method for forming a high dielectric film, which comprises a step for forming a high dielectric film on a substrate by ALD or CVD using an organic metal raw material at a temperature not more than 350°C, and a step for eliminating hydrogen in the high dielectric film by irradiating the film with ultraviolet light in an oxygen-containing atmosphere at a low pressure.Also disclosed is a method for manufacturing a semiconductor device, which comprises a step for forming a high dielectric film as a gate insulating film on a semiconductor substrate by ALD or CVD using an organic metal raw material at a temperature not more than 350°C, a step for eliminating hydrogen in the high dielectric film by irradiating the film with ultraviolet light in an oxygen-containing atmosphere at a low pressure, and a step for forming a gate electrode on the high dielectric film.</p> |
