PLASMA-ASSISTED ATOMIC LAYER EPITAXY OF CUBIC AND HEXAGONAL INN FILMS AND ITS ALLOYS WITH AIN AT LOW TEMPERATURES

摘要

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300 °C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.