SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This semiconductor device includes: a first magnetic layer (1) that is arranged on a flat substrate surface; and a second magnetic layer (3) that is arranged above the first magnetic layer (1) and is magnetically coupled with the first magnetic layer (1) by magnetostatic coupling or exchange coupling. Between the first magnetic layer (1) and the second magnetic layer (3), a third thin film layer (8) that has a film thickness that does not hinder the magnetic coupling between the first magnetic layer (1) and the second magnetic layer (3) is formed.