| 摘要 |
The purpose of the present disclosure is to improve heat resistance, diffusion resistance, and reliability in a semiconductor device such as a solid imaging device having a three-dimensional structure obtained by layering a plurality of substrates. The present disclosure pertains to a method for manufacturing said semiconductor device, as well as a semiconductor device, a method for manufacturing a semiconductor device, and an electronic instrument that make it possible to provide an electronic instrument provided with said semiconductor device. The present invention includes: a first substrate including a first wiring layer having a first connection electrode protruding from a first interlayer insulation film by a predetermined amount; and a second wiring layer having a second connection electrode protruding from a second interlayer insulation film by a predetermined amount. At the bonding surface between the first substrate and the second substrate, the first connection electrode and the second connection electrode are bonded to each other, and the first interlayer insulation film and the second interlayer insulation film, which face each other in the layering direction, are at least partially bonded. |
