GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE HAVING DUAL REFLECTIVE LAYERS

摘要

A gallium nitride-based light-emitting diode having dual reflective layers comprises: a substrate (200); an epitaxial layer formed upon said substrate (200) comprising a p-type layer (203), a light-emitting region (202) and an n-type layer (201); a current-spreading layer (205) formed upon the p-type layer (203); a p-electrode (207) formed upon the current spreading layer (205); a reflective structure formed between said p-electrode (207) and said epitaxial layer and consisting of an annular reflective layer (204) and a metallic reflective layer (206) whereof the geometrical center corresponds perpendicularly to the p-electrode (207). The annular reflective layer (204) is formed between the current spreading layer (205) and the p-type layer (203); the metallic reflective layer (206) is formed between the current spreading layer (205) and the p-electrode (207). The annular reflective layer (204) is arranged at a predetermined distance from the metallic reflective layer.