| 摘要 |
The oxide of the present invention for thin-film transistors is an In-Zn-Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In-Zn-Sn-based oxide are expressed by [Zn], [Sn], and [In], the In-Zn-Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])@0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>=0.5. [In]/([In]+[Zn]+[Sn])@0.3 - - - (1), [In]/([In]+[Zn]+[Sn])@1.4×{[Zn]/([Zn]+[Sn])}-0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])@0.83 - - - (3), and 0.1@[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching. |
