| 摘要 |
A memory device includes a parity circuit configured to detect presence or absence of an error using a plurality of command signals and a plurality of address signals, a command shift circuit configured to shift the plurality of command signals by a preset delay value in synchronization with a control clock, a clock control circuit configured to deactivate the control clock when there is no valid command signal in command signals being shifted in the command shift circuit, and a decoder circuit configured to decode a plurality of command signals output from the command shift circuit. |
