发明名称 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce the number of lamination films and etching processes in the manufacturing of a display device which uses an oxide semiconductor layer, and to improve the opening ratio of the pixels.SOLUTION: A display device includes: a gate electrode 102 formed on a transparent substrate 101; a gate insulation film 103 coating the gate electrode 102; an oxide semiconductor 104 formed on the gate insulation film 103; a drain electrode 106 and a source electrode 107 which sandwich a channel region; an interlayer capacitive film 108 coating the drain electrode 106 and the source electrode 107; a common electrode 109 formed on the interlayer capacitive film 108; and a pixel electrode 107 facing the common electrode 109. An etching stopper layer 105 coating the channel region is formed between the oxide semiconductor 104 and the source and drain electrodes 106, 107. The drain electrode 106 and the source electrode 107 directly contact with the oxide semiconductor 104.
申请公布号 JP2013258358(A) 申请公布日期 2013.12.26
申请号 JP20120134740 申请日期 2012.06.14
申请人 JAPAN DISPLAY INC 发明人 MIYAKE HIDEKAZU;UEMURA NORIHIRO;NODA TAKASHI;SUZUMURA ISAO;KANEKO TOSHITERU
分类号 H01L21/336;G02F1/1368;G09F9/30;H01L21/28;H01L27/32;H01L29/786;H01L51/50;H05B33/10;H05B33/26;H05B33/28 主分类号 H01L21/336
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