| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which high voltage is not needed in writing, a defect is less likely to occur, the writing time is short, and data cannot be rewritten, without an increase in cost.SOLUTION: The semiconductor memory device includes a memory element which includes: a diode-connected first transistor; a second transistor whose gate is connected to one terminal of a source electrode and a drain electrode of the diode-connected first transistor; and a capacitor element connected to the one terminal of the source electrode and the drain electrode of the diode-connected first transistor and to the gate of the second transistor. |
