| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a near-field terahertz photodetector capable of enhancing the S/N ratio, by significantly reducing the influence due to far-field lights, thereby detecting near-field light with high efficiency, and enhancing the resolution of an object by the near-field light, as much as down to 1/10 or smaller of the wavelength. <P>SOLUTION: This near-field terahertz photodetector includes a semiconductor chip 12, whose longitudinal electrical resistance along its surface changes due to near-field light of terahertz light 1, an insulating film 18 which covers the surface of the semiconductor chip, and a conductive film 20 able to shield the terahertz light by covering the surface of the insulating film. The conductive film 20 has an aperture 21, whose largest size is one digit or more smaller than the wavelength of the terahertz light. Furthermore, a planar conductive probe 14 is provided between the conductive film 18 and the semiconductor chip 12. The conductive probe 14 is insulated from the conductive film 20 by the insulating film 18, and the tip 14a thereof is located on the inside of the aperture 21. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
