| 摘要 |
A method for programmed-state detection in memristor stacks includes applying a first secondary switching voltage across a memristor stack to produce a first programmed-state-dependent secondary switching response in a memristor in the memristor stack. The programmed-state-dependent secondary switching response results in a detectable change in the electrical resistance of the memristor stack. The method also includes measuring a first electrical resistance of the memristor stack and inferring the programmed state of the memristor stack from the measured electrical resistance. |
