| 摘要 |
PROBLEM TO BE SOLVED: To provide a power-module semiconductor device that allows downsizing and weight saving of a SiC power module that is thinly manufactured.SOLUTION: A power-module semiconductor device includes: a ceramic substrate 10; a first pattern D (K4) of a first copper plate layer disposed on a surface of the ceramic substrate 10; a first semiconductor device disposed on the first pattern D (K4); a first columnar connection electrode 18disposed on the first pattern D (K4); and an output terminal O connected to the first columnar connection electrode 18. |
