发明名称 SINGLE CRYSTAL GROWING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus in which a silicon single crystal in which axial resistivity distribution is uniform can be grown with excellent energy efficiency.SOLUTION: A single crystal growing apparatus includes: a crystal growing chamber for growing a silicon single crystal; a raw material supply chamber for supplying a melt to the crystal growing chamber; and a melt supply pipe that connects the crystal growing chamber and the raw material supply chamber, wherein an outer diameter of a quartz crucible in the crystal growing chamber is 2-5 times of a diameter of the growing silicon single crystal and an aspect ratio of the quartz crucible (outer diameter/height) is 2-10.
申请公布号 JP2013256417(A) 申请公布日期 2013.12.26
申请号 JP20120134045 申请日期 2012.06.13
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 HOSHI RYOJI;TAKAZAWA MASANORI;SUGAWARA TAKAYO;KAMATA HIROYUKI
分类号 C30B29/06;C30B15/02 主分类号 C30B29/06
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