发明名称 |
SINGLE CRYSTAL GROWING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus in which a silicon single crystal in which axial resistivity distribution is uniform can be grown with excellent energy efficiency.SOLUTION: A single crystal growing apparatus includes: a crystal growing chamber for growing a silicon single crystal; a raw material supply chamber for supplying a melt to the crystal growing chamber; and a melt supply pipe that connects the crystal growing chamber and the raw material supply chamber, wherein an outer diameter of a quartz crucible in the crystal growing chamber is 2-5 times of a diameter of the growing silicon single crystal and an aspect ratio of the quartz crucible (outer diameter/height) is 2-10. |
申请公布号 |
JP2013256417(A) |
申请公布日期 |
2013.12.26 |
申请号 |
JP20120134045 |
申请日期 |
2012.06.13 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
HOSHI RYOJI;TAKAZAWA MASANORI;SUGAWARA TAKAYO;KAMATA HIROYUKI |
分类号 |
C30B29/06;C30B15/02 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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