发明名称 |
MULTI-GATE FIELD-EFFECT TRANSISTOR AND PROCESS THEREOF |
摘要 |
A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from bottom to top. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor. |
申请公布号 |
US2013341638(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213530127 |
申请日期 |
2012.06.22 |
申请人 |
LIAO CHIN-I;HSU CHIA-LIN;LI MING-YEN;HSIEH YUNG-LUN;CHEN CHIEN-HAO;LEE BO-SYUAN |
发明人 |
LIAO CHIN-I;HSU CHIA-LIN;LI MING-YEN;HSIEH YUNG-LUN;CHEN CHIEN-HAO;LEE BO-SYUAN |
分类号 |
H01L29/772;H01L21/20;H01L29/161 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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