SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE

摘要

A first first-conductivity-type impurity region (4) is provided in an upper portion of a semiconductor layer (102) around a trench (12). A gate electrode (8) is provided on a sidewall surface of the trench (12), and on the semiconductor layer (102) around the trench (12) with a gate insulating film (11) interposed therebetween. A second-conductivity-type impurity region (50) and a second first-conductivity-type impurity region (51) are interposed between a portion of the gate electrode (8) around the trench (12) and the first first-conductivity-type impurity region (4) sequentially on the first first-conductivity-type impurity region (4).