发明名称 NON-VOLATILE MEMORY DEVICE
摘要 A non-volatile memory device comprises a first storage unit which stores mapping information between a plurality of first addresses and a plurality of second addresses, and data; a second storage unit having a storage capacity smaller than that of the first storage unit; and a decoder which receives a first read address that is one of the plurality of first addresses, and while the mapping information is provided from the first storage unit to the second storage unit in order to locate a second read address that is one of the plurality of second addresses and corresponds to the first read address, applies a read command for reading data corresponding to the second read address to the first storage unit.
申请公布号 US2013346677(A1) 申请公布日期 2013.12.26
申请号 US201313786911 申请日期 2013.03.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JAE-GEUN;LEE SEUNG-WON;CHO YOUNG-JIN;KWON EUI-HYEOK;LEE CHUL-SEUNG
分类号 G06F12/02 主分类号 G06F12/02
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